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| www..com Preliminary data SPP08P06P SPB08P06P SIPMOS (R) Power-Transistor Features * Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W * * * * A Type SPP08P06P SPB08P06P Package Ordering Code Pin 1 G PIN 2/4 D PIN 3 S P-TO220-3-1 Q67040-S4729 P-TO263-3-2 Q67040-S4233 Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.8 -6.2 Unit A ID T C = 25 C T C = 100 C Pulsed drain current ID puls EAS EAR dv/dt -35.2 70 4.2 6 kV/s mJ T C = 25 C Avalanche energy, single pulse I D = -8.8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -8.8 A, V DS = -48 , di/dt = 200 A/s, T jmax = 175 C Gate source voltage Power dissipation VGS Ptot Tj , Tstg 20 42 -55...+175 55/175/56 V W C T C = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 www..com Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - SPP08P06P SPB08P06P Unit max. 3.6 62 62 40 K/W RthJC RthJA RthJA - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 A -0.1 -10 -10 0.23 -1 -100 -100 0.3 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.1 VGS = 0 V, I D = -250 A Gate threshold voltage, VGS = VDS I D = -250 A, Tj = 25 C Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 C VDS = -60 V, V GS = 0 V, T j = 150 C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -6.2 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-11-22 www..com Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Transconductance typ. SPP08P06P SPB08P06P Unit max. gfs Ciss Coss Crss td(on) 1.5 - 3.6 335 105 65 16 420 135 95 24 S pF VDS2*I D*RDS(on)max , ID = -6.2 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Rise time tr - 46 69 VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Turn-off delay time td(off) - 48 72 VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Fall time tf - 14 21 VDD = -30 V, V GS = -10 V, ID = -6.2 A, RG = 6 W Page 3 1999-11-22 www..com Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Dynamic Characteristics Gate to source charge typ. SPP08P06P SPB08P06P Unit max. Qgs Qgd Qg V(plateau) - 1.4 4 10 -3.85 2.1 6 15 - nC VDD = -48 , ID = -8.8 A Gate to drain charge VDD = -48 V, ID = -8.8 A Gate charge total VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V Gate plateau voltage V VDD = -48 , I D = -8.8 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -1.17 60 100 max. -8.8 -35.2 -1.55 90 150 Unit IS ISM VSD trr Qrr - A T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -8.8 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/s Page 4 1999-11-22 www..com Preliminary data Power dissipation Drain current SPP08P06P SPB08P06P Ptot = f (TC) SPP08P06P ID = f (TC ) parameter: VGS 10 V SPP08P06P 50 -10 W 40 35 A -8 -7 Ptot 30 25 20 15 10 5 0 0 ID 20 40 60 80 100 120 140 160C 190 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160C 190 TC TC Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T C = 25 C -10 2 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP08P06P SPP08P06P K/W A tp = 12.0s 10 0 -10 1 ID 100 s Z thJC 10 -1 V DS /I D = D = 0.50 1 ms on ) -10 0 R DS ( 10 -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 ms DC 10 -3 -10 -1 -1 -10 -10 0 -10 1 V -10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 5 tp 1999-11-22 www..com Preliminary data Typ. output characteristic SPP08P06P SPB08P06P Typ. drain-source-on-resistance I D = f (VDS); T j=25C parameter: tp = 80 s SPP08P06P RDS(on) = f (ID ) parameter: VGS SPP08P06P -21 Ptot = 42.00W j i VGS [V] a b 1.0 A -18 -16 -14 -4.0 -4.5 W 0.8 hc d a b c d e f g h RDS(on) -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -10.0 0.7 0.6 0.5 0.4 0.3 0.2 ID g e f -12 -10 e fg h i j -8 d -6 c -4 b -2 0 0 a 0.1 0.0 0 VGS [V] = a b c d e f -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 g h i j -7.0 -7.5 -8.0 -10.0 i j -2 -4 -6 -8 V -11 -2 -4 -6 -8 -10 -12 -14 A -18 VDS ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS 2 x I D x RDS(on)max parameter: tp = 80 s -30 gfs = f(ID); Tj=25C parameter: gfs 6 A S -24 -22 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -1 -2 -3 -4 -5 -6 -7 -8 gfs V -10 VGS -20 4 ID 3 2 1 0 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20 ID Page 6 1999-11-22 www..com Preliminary data Drain-source on-state resistance Gate threshold voltage SPP08P06P SPB08P06P RDS(on) = f (Tj) parameter : I D = -6.2 A, V GS = -10 V SPP08P06P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 A -5.0 1.0 W 0.8 V 98% -4.0 RDS(on) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 V GS(th) -3.5 -3.0 -2.5 typ 98% typ 2% -2.0 -1.5 -1.0 -0.5 0.0 -60 -20 20 60 100 140 C 200 -20 20 60 100 C 180 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 3 IF = f (VSD ) parameter: Tj , tp = 80 s -10 2 SPP08P06P A pF Ciss -10 1 C 10 2 Coss Crss -10 0 IF Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 V -5 -10 -15 -20 -25 -30 -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 1999-11-22 www..com Preliminary data Avalanche energy Typ. gate charge SPP08P06P SPB08P06P EAS = f (Tj) para.: I D = -8.8 A , VDD = -25 V, R GS = 25 W 80 VGS = f (QGate ) parameter: ID = -8.8 A pulsed SPP08P06P -16 mJ V 60 -12 E AS 50 VGS -10 40 -8 0,2 VDS max 0,8 VDS max 30 -6 20 -4 10 -2 0 25 45 65 85 105 125 145 C 185 Tj 0 0 2 4 6 8 10 12 nC 15 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP08P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 140 C 200 Tj Page 8 1999-11-22 www..com Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP08P06P SPB08P06P Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-11-22 |
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